Heteroepitaxial TiN Films Growm by Reactive Ion Beam Epitaxy at Room Temperature
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概要
- 論文の詳細を見る
Reactive ion beam epitaxy with an extra-low energy N^+_2 ion beam and a Ti molecular beam has been employed to grow hetero-epitaxial TiN films on MgO substrates. The TiN film quality drastically depends on the N^+_2 kinetic energy. Epitaxial TiN films with a low resistivity about 16 μΩ・cm were obtained at a kinetic energy of 50 eV/atom even at room substrate temperature, which is the lowest epitaxial temperature so far. At an elevated temperature, epitaxial growth was observed at a wide kinetic energy range. Epitaxial growth mechanisms in low energy reactive ion beam deposition are discussed.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Sayama Katsunobu
New Materials Research Center Sanyo Electric Co. Ltd.
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Sano K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Oose Michihiro
Environmental Engineering Lab. R&d Center
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OOSE Michihiro
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation
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Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
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