Kawakubo Takashi | Corporate R&d Center Toshiba Corporation
スポンサーリンク
概要
関連著者
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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Yanase N
Corporate R&d Center Toshiba Corporation
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Abe Kazuhide
Corporate R&d Center Toshiba Corporation
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ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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ABE Kazuhide
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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YANASE Naoko
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Sano K
Ntt Photonics Laboratories Ntt Corporation
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Komatsu S
Waseda Univ. Tokyo Jpn
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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KOMATSU Shuichi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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YASUMOTO Takaaki
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Sayama Katsunobu
New Materials Research Center Sanyo Electric Co. Ltd.
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Sano K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Oose Michihiro
Environmental Engineering Lab. R&d Center
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Yasumoto Takaaki
Corporate R&d Center Toshiba Corporation
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OOSE Michihiro
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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YASUMOTO Takaaki
Corporate R&D Center, Toshiba Corporation
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YANASE Naoko
Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Corporate R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Corporate R&D Center, Toshiba Corporation
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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ABE Kazuhide
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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YANASE Naoko
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KOMATSU Shuichi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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SANO Kenya
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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FUKUSHIMA Noburu
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KAWAKUBO Takashi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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Yanase Naoko
Corporate R&d Center Toshiba Corporation
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YANASE Naoko
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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KAWAKUBO Takashi
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
著作論文
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
- Asymmetric Switching of Ferroelectric Polarization in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
- Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
- Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
- Heteroepitaxial TiN Film Growth on Si (111) by Low Energy Reactive Ion Beam Epitaxy
- Heteroepitaxial TiN Films Growm by Reactive Ion Beam Epitaxy at Room Temperature