ABE Kazuhide | Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
スポンサーリンク
概要
- 同名の論文著者
- Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Toshの論文著者
関連著者
-
ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
-
YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
-
KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
-
Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
-
Yanase N
Corporate R&d Center Toshiba Corporation
-
Abe Kazuhide
Corporate R&d Center Toshiba Corporation
-
YASUMOTO Takaaki
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
-
FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
-
Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Fukushima N
Corporate Research & Development Center Toshiba Corporation
-
YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
-
Yasumoto Takaaki
Corporate R&d Center Toshiba Corporation
-
YANASE Naoko
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
-
KAWAKUBO Takashi
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
-
ABE Kazuhide
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
-
Kawakubo Takashi
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
-
Abe Kazuhide
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
- Asymmetric Switching of Ferroelectric Polarization in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO3 Thin Film Capacitor