Epitaxial Growth of Ti_<1-x>Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-02-01
著者
-
Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
-
KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
-
ABE Kazuhide
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
-
SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
-
YANASE Naoko
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
-
Sano K
Ntt Photonics Laboratories Ntt Corporation
-
Yanase N
Corporate R&d Center Toshiba Corporation
-
Abe Kazuhide
Corporate R&d Center Toshiba Corporation
-
Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
-
Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
関連論文
- 圧電駆動型RF-MEMS可変キャパシタの電気特性
- 半導体デバイス開発におけるTEMの活用 高誘電体膜の場合
- V. デバイス, デバイス材料
- (Ba,Sr)TiO_3膜のエピタキシャル成長と強誘電特性
- 積層形低インピ-ダンス超音波プロ-ブ
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
- Asymmetric Switching of Ferroelectric Polarization in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
- Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
- Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Ba_Sr_TiO_3/SrRuO_3キャパシタの膜微細構造
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- C-8 積層圧電体形超音波プローブ(超音波トランスジューサ)
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- InP-based High-speed Transistors and Their IC Applications
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
- First-Principles Approach to the Effect of c-axis Elongation of BaTiO_3 Thin Films
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- (Ba,Sr) TiO_3系薄膜のエピタキシャル成長とその強誘電的特性
- Heteroepitaxial TiN Film Growth on Si (111) by Low Energy Reactive Ion Beam Epitaxy
- Heteroepitaxial TiN Films Growm by Reactive Ion Beam Epitaxy at Room Temperature
- 18pWE-2 強誘電体極薄膜の現状及びバルク物性との比較
- 18pWE-2 強誘電体極薄膜の現状及びバルク物性との比較
- 応力による格子歪みと強誘電性発現のメカニズム
- Epitaxial Growth and Dielectric Properties of (Ba_Sr_)TiO_3 Thin Film ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO_3 Thin Films
- Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO_3 Films
- Crystallographic Orientation Dependence of Dielectric Constant in Epitaxially Grown SrTiO_3 Films
- A Low-Impedance Ultrasonic Probe Using a Multilayer Piezoelectric Ceramic : Ultrasonic Transduction
- Temperature Stability of a PBZMT Electrostrictive Ceramic : F: FERROELECTRIC MATERIALS