Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO_3 Thin Films
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概要
- 論文の詳細を見る
The dielectric constant and leakage current were studied for SrTiO_3 films thinner than 100 nm, focusing on the influence of the dielectric-electrode interface and the grain boundary. Experimentally, the thickness dependence of the dielectric constant and leakage current was investigated for both epitaxially grown films and polycrystalline films. The interface between the dielectric and electrode, as well as the grain boundary, has been found to cause the lowering of the dielectric constant. The grain boundary has been found to exert a notable effect in suppressing the leakage current.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Abe Kazuhide
Materials And Devices Laboratory R & D Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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