(Ba,Sr) TiO_3系薄膜のエピタキシャル成長とその強誘電的特性
スポンサーリンク
概要
- 論文の詳細を見る
A series of studies on heteroepitaxial Ba_xSr_<1-x>TiO_3(BST) films grown by radio-frequency magnetron sput-tering was reviewed. It is theoretically suggested that the application of two-dimensional compressive stresses to a ferroelectric crystal raise the Curie temperature. Artificial modification of the Curie temperature was experimentally made by introducing lattice misfit strains in heteroepitaxial films. A heteroepitaxial BaTiO_3 film with a thickness of 12 nm grown on a SrRUO_3/SrTiO_3 substrate exhibited a ferroelectric hysteresis loop at 200℃, even though the inherent Curie temperature is 130℃. The possibility for ferroelectric non-Volatile memory applications of heteroepitaxial BST films and their advantages over Pb(Zr,Ti)O_3 or SrBi_2 Ta_2O_9 was discussed.
- 社団法人日本セラミックス協会の論文
- 2001-04-01
著者
-
阿部 和秀
(株)東芝 研究開発センター
-
阿部 和秀
東芝・総合研究所
-
Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
-
Abe Kazuhide
Metals And Ceramics Laboratory Toshiba R&amo;d Center Toshiba Corporation
-
Abe Kazuhide
Research And Development Center Toshiba Corporation
-
Abe Kazuhide
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
-
阿部 和秀
(株)東芝研究開発センター Lsi基盤技術ラボラトリー
-
阿部 和秀
(株)東芝
関連論文
- 圧電駆動型RF-MEMS可変キャパシタの電気特性
- 半導体デバイス開発におけるTEMの活用 高誘電体膜の場合
- V. デバイス, デバイス材料
- (Ba,Sr)TiO_3膜のエピタキシャル成長と強誘電特性
- 積層形低インピ-ダンス超音波プロ-ブ
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
- Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
- Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- Ba_Sr_TiO_3/SrRuO_3キャパシタの膜微細構造
- C-8 積層圧電体形超音波プローブ(超音波トランスジューサ)
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- (Ba,Sr) TiO_3系薄膜のエピタキシャル成長とその強誘電的特性
- 18pWE-2 強誘電体極薄膜の現状及びバルク物性との比較
- 18pWE-2 強誘電体極薄膜の現状及びバルク物性との比較
- 応力による格子歪みと強誘電性発現のメカニズム
- Epitaxial Growth and Dielectric Properties of (Ba_Sr_)TiO_3 Thin Film ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO_3 Thin Films
- Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO_3 Films
- Crystallographic Orientation Dependence of Dielectric Constant in Epitaxially Grown SrTiO_3 Films
- A Low-Impedance Ultrasonic Probe Using a Multilayer Piezoelectric Ceramic : Ultrasonic Transduction
- Temperature Stability of a PBZMT Electrostrictive Ceramic : F: FERROELECTRIC MATERIALS