Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO_3 Films
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概要
- 論文の詳細を見る
The dielectric constant was measured and analyzed for epitaxially grown SrTiO_3 thin films with thicknesses from 23 nm to 92 nm. A stronger applied bias field or a thinner dielectric film caused a decrease in the dielectric constant. Thermodynamic theory was introdtuced to explain these variations. Good agreement between the experimental results and theoretical calculations led to the conclusion that both the bias field dependence and thickness dependence is an intrinsic nature of SrTiO_3 thin film capacitors.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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