Epitaxial Growth and Dielectric Properties of (Ba_<0.24>Sr_<0.76>)TiO_3 Thin Film (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
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A (Ba_<0.24>Sr_<0.76>)TiO_3 thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba_xSr_<1-x>)TiO_3 polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba_xSr_<1-x>)TiO_3 thin films.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Abe Kazuhide
Materials And Devices Research Laboratories R & D Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Research Laboratories R & D Center Toshiba Corporation
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