Heteroepitaxial TiN Film Growth on Si (111) by Low Energy Reactive Ion Beam Epitaxy
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概要
- 論文の詳細を見る
Epitaxial TiN (111) films were grown on Si (111) substrates by low energy reactive ion beam deposition using N_2 ion beam irradiation and Ti evaporation. TiN epitaxial film formation was investigated as a function of the substrate temperature (T_s) and the kinetic energy of the ion beam (E_b). Using X-ray diffraction (XRD) and in-situ reflection high-energy electron diffraction (RHEED), the epitaxial relationship was found to be TiN (111)⫽Si (111), TiN<110>⫽Si<110> above substrate temperature of 400℃. Cross-sectional bright-field transmission electron microscope (TEM) observation has shown that the interface is quite flat and sharp and that four TiN lattice spacings match three spacings of the Si lattice. A lowest resistivity value of 18 μΩ・cm (T_s=600℃, E_b=100 eV) was obtained.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Sayama Katsunobu
New Materials Research Center Sanyo Electric Co. Ltd.
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Sano K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Oose Michihiro
Environmental Engineering Lab. R&d Center
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OOSE Michihiro
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation
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Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
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