Electrical Properties and Thermodynamic Stability of Sr(Ti1-x,Rux)O3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
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概要
- 論文の詳細を見る
Sr(Ti1-x,Rux)O3 (STRO) epitaxial thin films were deposited on single-crystal SrTiO3(100) substrates using the inductive-coupling-plasma-induced RF magnetron sputtering method without oxygen. The electrical conductivity of STRO films increases with Ru concentration and levels of the Ru 4d states are observed in the band gap of SrTiO3 by X-ray photoelectron spectroscopy (XPS) analysis. These results are consistent with those obtained by first-principles calculations. Thermodynamic stability increases with the decrease of Ru concentration, and STRO ($x<0.50$) is free from degradation under annealing H2 atmosphere at 600°C@. This high resistance against reductive processes indicates that STRO ($x<0.50$) is one of the most suitable candidates for conductive oxide electrodes of oxide capacitors.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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Yoshiki Masahiko
Material Analysis Group Corporate Research And Development Center Toshiba Corp.
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Ohara Ryoichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corp.
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Sano Kenya
Advanced Lsi Technology Laboratory R&d Center Toshiba Corporation
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Yoshiki Masahiko
Material Analysis Group, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kawakubo Takashi
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sano Kenya
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Schimizu Tatsuo
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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