Growth of Epitaxial SrTiO_3 on Epitaxial(Ti, Al)N/Si(100)Substrate Using Ti-Buffer Layer(Special Issue on Nonvolatile Memories)
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概要
- 論文の詳細を見る
Epitaxial SrTiO_3(STO) film on epitaxial(Ti, Al)N/Si(100)was successfully obtained using a Ti-buffer layer.The SrTiO_3 film was (100) oriented and grew in parallel epitaxial relationship(cube-on-cube), i.e., (100)SrTiO_3//(100)(Ti, Al)N//(100)Si, <110> SrTiO_3//<110>(Ti, Al)N//<110>Si. The Ti-buffer layer was grown on(Ti, Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO_2.
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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Ohara Ryoichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corp.
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Sano Kenya
Advanced Lsi Technology Laboratory R&d Center Toshiba Corporation
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Kawakubo Takashi
Advanced Lsi Technology Laboratory R&d Center Toshiba Corporation
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