Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Niu H
Osaka Inst. Technol. Osaka Jpn
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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NIU Hiromi
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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Niu Hiromi
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Ando K
Advanced Research Laboratory R&d Center Toshiba Corporation
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Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Tanaka Shigenori
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Tanaka Shigenori
Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
関連論文
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
- Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
- Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
- Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
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- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Application of Superconducting Films to Fault Current Limiter
- Single-Crystal Growth of Bi_2 (Sr,Ca)_Cu_2O_x and its Superconductivity : Electrical Properties of Condensed Matter
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_
- Identification of 3d^9-3d^84f Transition in Mo XVI
- Transport Critical Current Densities in Cation-Deficient Bi_2(Sr, Ca)_3Cu_2O_
- Variational Quantum Monte Carlo Approach to the Electronic Structure of NiO
- Cohesive Energy of NiO : A Quantum Monte Carlo Approach
- Relationship between Madelung Potentials and Bond Valence Sums in Copper-Oxide Superconductors
- Performance Simulation for Dye-Sensitized Solar Cells: Toward High Efficiency and Solid State