Single-Crystal Growth of Bi_2 (Sr,Ca)_<3-d>Cu_2O_x and its Superconductivity : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
A single crystal of Bi_<2.2> (Sr,Ca)_<3-d>Cu_2O_x was grown by a self-flux method using a solution containing excess Bi_3O_3 and CuO compared to the composition of Bi_2(Sr,ca)_<3-d>Cu_2O_x in the Bi-Sr-Ca-Cu-O system. The dimensions of the single crystal obtained were up to 7×5×1 mm^3. The critical temperature of the single crystal was 84 K which was determined by both magnetization and electrical resistivity measurements. The ratio of resistivities in the c-plane and along the c-axis was found to be approximately 35 at T_c onset.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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Yamashita Tomohisa
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Ando K
School Of Pharmacy Tokyo University Of Pharmacy And Life Sciences
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YOSHINO Hisashi
Advanced Research Laboratory, R & D Center, Toshiba Corporation
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NOMURA Shunji
Advanced Research Laboratory, Research and Development Center, TOSHIBA Corporation
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Yoshino Hisashi
Advanced Research Laboratory R & D Center Toshiba Corporation
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Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
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