NIU Hiromi | Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
スポンサーリンク
概要
関連著者
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Niu H
Osaka Inst. Technol. Osaka Jpn
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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NIU Hiromi
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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Niu Hiromi
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Ando K
Advanced Research Laboratory R&d Center Toshiba Corporation
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Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Tanaka Shigenori
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Tanaka Shigenori
Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors