Sugawara M | Fujitsu Laboratories Ltd.
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概要
関連著者
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Sugawara M
Fujitsu Laboratories Ltd.
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Sugawara M
Semiconductor Company Sony Corporation
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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MUKAI Kohki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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Mukai K
Univ. Tokyo Chiba Jpn
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MUKAI Kohki
Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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SUGAWARA Minoru
Department of Electrical Engineering, Faculty of Engineering Gumma University
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MATSUOKA Akio
Department of Electrical Engineering, Gunma University
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Nakata Y
Fujitsu Laboratories Ltd.
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KONDOH Yoshiomi
Department of Electronic Engineering, Gunma University
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TSUDAKA Keisuke
Process Development Department, Semiconductor Company, Sony Corporation
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NOZAWA Satoru
Process Development Department, Semiconductor Company, Sony Corporation
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Nozawa Satoru
Process Development Department Semiconductor Company Sony Corporation
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Tsudaka Keisuke
Process Development Department Semiconductor Company Sony Corporation
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Kondoh Y
Department Of Electronic Engineering Gunma University
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Kondoh Yoshiomi
Department Of Electrical Engineering College Of Technology Gunma University
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Kawahira Hiroichi
Process Development Department Semiconductor Company Sony Corporation
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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Sugawara Minoru
Department Of Electrical Engineering Faculty Of Engineering Gunma University
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Sugawara Minoru
Department Of Electrical Engineering Faculty Of Engineering Gumma University
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Kita T
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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ISHIKAWA Hiroshi
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Wada Osamu
The Femtosecond Technology Research Association
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OHTSUKA Nobuyuki
Fujitsu Laboratories Ltd.
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Fukuda T
Gunma Univ. Gunma Jpn
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Yamaguchi Y
Core Technology Laboratory Mitsui Kinzoku
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Yamaguchi Y
Fuji Xerox Co. Ltd. Kanagawa Jpn
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YAMASHIRO Kazuhide
Materials Research laboratory, HOYA Corporation
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SUGAWARA Minoru
Materials Research laboratory, HOYA Corporation
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NAGASAWA Hiroyuki
Materials Research laboratory, HOYA Corporation
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YAMAGUCHI Yoh-ichi
Materials Research laboratory, HOYA Corporation
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Yokoyama N
Fujitsu Laboratories Ltd.
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FUKUDA Taichi
Department of Electronic Engineering, Gunma University
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ONOZATO Atsushi
Department of Electronic Engineering, Gunma University
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Yamashiro Kazuhide
Materials Research Laboratory Hoya Corporation
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Nagasawa H
Osaka Prefecture Univ. Osaka Jpn
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Yamaguchi Yoh-ichi
Materials Research Laboratory Hoya Corporation
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Nagasawa Hiroyuki
Materials Research Laboratory Hoya Corporation
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Ishikawa Hiroshi
Fujitsu Laboratories Limited
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WADA Osamu
Department of Applied Quantum Physics, Kyushu University
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AWANO Yuji
Fujitsu Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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Akiyama Tomoyuki
Qd Laser Inc.
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KITA Takeshi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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HATORI Nobuyuki
Fujitsu Laboratories Ltd.
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AKIYAMA Tomoyuki
Femtosecond Technology Research Association
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NAKAGAWA Yuji
Tokyo Institute of Technology
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SUGAWARA Mitsuru
Tokyo Institute of Technology
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NAKATA Yoshiaki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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ISHIKAWA Hiroshi
Tokyo Institute of Technology
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SHOJI Hajime
Fujitsu Laboratories Ltd.
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Wada O
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Ebe H
Univ. Tokyo Tokyo Jpn
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Yamazaki Shigeru
Corporate R&d Center Mitsui Mining & Smelting Co. Lid.
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Tomita Manabu
Semiconductor Company Sony Corporation
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GOTO Makoto
Department of Rheumatology, Tokyo Metropolitan Otsuka Hospital
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Kita T
Institute Of Natural Science Kobe University
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OGAWA Tohru
ULSI R & D Laboratories, SONY Corporarion, Atsugi Technology Center
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SATO Koichi
Plasma Science Center, Nagoya University
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Ogawa Tohru
Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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Yamazaki S
Fujitsu Laboratories Ltd.
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Ohnuma Hidetoshi
Process Development Department Semiconductor Company Sony Corporation
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TSUDAKA Keisuke
Semiconductor Company, Sony Corporation
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KAWAHIRA Hiroichi
Semiconductor Company, Sony Corporation
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SUGAWARA Minoru
Semiconductor Company, Sony Corporation
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OHNUMA Hidetoshi
Semiconductor Company, Sony Corporation
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NOZAWA Satoru
Semiconductor Company, Sony Corporation
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Kita Takeshi
Department Of Bacteriology Hirosaki University School Of Medicine
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Ogura Akihiro
Lsi System Development Division Semiconductor Company Sony Corporation
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Sugawara Minoru
Mos Lsi Division Sony Corporation
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KAGAMI Ichiro
MOS LSI Division, Semiconductor Company, Sony Corporation
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KAWAHIRA Hiroichi
MOS LSI Division, Semiconductor Company, Sony Corporation
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TSUDAKA Keisuke
MOS LSI Division, Semiconductor Company, Sony Corporation
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ISHIKAWA Kiichi
MOS LSI Division, Semiconductor Company, Sony Corporation
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NOZAWA Satoru
MOS LSI Division, Semiconductor Company, Sony Corporation
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SHIMIZU Hideo
ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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SUGAWARA Minoru
LSI System Development Division, Semiconductor Company, Sony Corporation
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KAWAHIRA Hiroichi
LSI System Development Division, Semiconductor Company, Sony Corporation
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TSUDAKA Keisuke
LSI System Development Division, Semiconductor Company, Sony Corporation
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NOZAWA Satoru
LSI System Development Division, Semiconductor Company, Sony Corporation
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Kagami Ichiro
Mos Lsi Division Semiconductor Company Sony Corporation
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ISHII Masayoshi
Department of Electronic Engineering, Gunma University
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TSURUBUCHI Iwao
Department of Electronic Engineering, Faculty of Engineering, Gunma University
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Tsurubuchi Iwao
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Onozato Atsushi
Department Of Electronic Engineering Gunma University
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Futatsugi T
Fujitsu Laboratories Ltd.
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Onozato Atsushi
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Ishikawa Kiichi
Mos Lsi Division Semiconductor Company Sony Corporation
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Shimizu Hideo
Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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Sato Koichi
Plasma Science Center Nagoya University
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Wada Osamu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
著作論文
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
- Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- Smoothing Roughness of SiC Membrane Surface for X-Ray Masks : X-Ray Lithography
- Smoothing Roughness of SiC Membrane Surface for X-Ray Masks
- Practical Optical Proximity Effect Correction Adopting Process Latitude Consideration
- New Systematic Evaluation Method for Attenuated Phase-Shifting Mask Specifications
- Evaluation of Phase-Shifting Masks for Dense Contact Holes Using the Exposure-Defocus and Mask Fabrication Latitude Methodology
- Uniform RF Discharge Plasmas Produced by a Square Hollow Cathode with Tapered Shape
- RF Hollow Cathode Discharges with Tapered Shape
- Monte Carlo Simulation of RF Plasmas and Trial Investigation of Similarity Rule
- A Monte Carlo Simulation of Langmuir Probe Methods for Plasmas Having RF Amplitude Oscillations
- Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers