Mitani Yuichiro | Advanced Lsi Technology Laboratory Toshiba Corporation

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著作論文

Precipitation of Boron in Highly Boron-Doped Silicon
Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
A Study of the Effect of Deuterium on Stress-Induced Leakage Current
Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics

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