Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy

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概要

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• We investigated the band alignment of hafnium silicon oxynitride (HfSiON) on Si, using reflection electron energy loss spectroscopy (REELS) and X-ray electron spectroscopy (XPS). REELS was found to be effective for determining the bandgap energy of high-$k$ materials. In HfSiON films, although the bandgap ($E_{\text{g}}$), energy barrier of electrons ($\Delta E_{\text{c}}$) and holes ($\Delta E_{\text{v}}$) decreased abruptly at high nitrogen concentration, they retained values as large as 1 eV. The bandgap narrowing can be ascribed to Hf–N formation inside HfSiON films. We speculate that HfSiON films are formed by insulating trihafnium tetranitride (Hf3N4) or its pseudo-alloy (Hf3N4)x(HfO2)1-x as short-range order in the material, instead of forming conducting HfN.

• 2005-03-15

著者

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Koyama Masato

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Koike Masahiro

  Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation

• Kamimuta Yuuichi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Ino Tsunehiro

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Suzuki Masamichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Tsunashima Yoshitaka

  Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• TSUNASHIMA Yoshitaka

  Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation

• Ino Tsunehiro

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Nishiyama Akira

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Suzuki Masamichi

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Koike Masahiro

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Kamimuta Yuuichi

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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