Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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MIZUSHIMA Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SATO Tsutomu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mitsutake Kunihiro
Process & Manufactruing Engineering Center Semiconductor Company Toshiba Corporation
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Sato Tsutomu
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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MIZUSHIMA Ichiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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MITSUTAKE Kunihiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
関連論文
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- Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
- Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
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- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
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- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
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- SOI/Bulk Hybrid Wafer Fabrication Process Using Selective Epitaxial Growth (SEG) Technique for High-End SoC Applications
- Theoretical Study on the Formation Process of Empty Space in Silicon (ESS)
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- SOI/Bulk Hybrid Wafer Fabrication Process Using Selective Epitaxial Growth (SEG) Technique for High-End SoC Applications