Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
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TSUNASHIMA Yoshitaka
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Tsunashima Y
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsunashima Yoshitaka
Microelectronics Engineering Laboratory Toshiba Corp.
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Aoki Nobutoshi
Microelectronics Engineering Laboratory Toshiba Corporation
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SATO Tsutomu
Microelectronics Engineering Laboratory, Toshiba Corporation
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Sato Tsutomu
Microelectronics Engineering Laboratory Toshiba Corporation
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- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
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