Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
Hazama Hiroaki
Microelectronics Engineering Laboratory Toshiba Corp.
-
SAIDA Shigehiko
Microelectronics Engineering Laboratory, Toshiba Corp.
-
MITANI Yuuichirou
ULSI Research Laboratories, Toshiba Corp.
-
KAMMBAYASHI Shigeru
ULSI Research Laboratories, Toshiba Corp.
-
MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
-
SHIOZAWA Jun-ichi
Microelectronics Engineering Laboratory, Toshiba Corp.
-
OZAWA Yoshio
Microelectronics Engineering Laboratory, Toshiba Corp.
-
Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
-
Mizushima Ichiro
Microelectronics Engineering Laboratory Toshiba Corp.
-
Ozawa Yoshio
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
-
Saida Shigehiko
Microelectronics Engineering Laboratory Toshiba Corp.
-
Ozawa Yoshio
Microelectronics Engineering Laboratory Toshiba Corp.
-
Shiozawa Jun-ichi
Microelectronics Engineering Laboratory Toshiba Corp.
-
Mitani Yuuichirou
Ulsi Research Laboratories Toshiba Corp.
-
Kammbayashi Shigeru
Ulsi Research Laboratories Toshiba Corp.
関連論文
- Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
- Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors
- Sub 1.3nm Amorphous Ta_2O_5 Gate Dielectrics for Damascene Metal Gate Transistor
- Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
- Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
- Precipitation of Boron in Highly Boron-Doped Silicon
- New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Diffusion and Segregation of Carbon in SiO_2 Films
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method