New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• SAIDA Shigehiko

  Microelectronics Engineering Laboratory, Toshiba Corp.

• TSUNASHIMA Yoshitaka

  Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation

• Tsunashima Yoshitaka

  Microelectronics Engineering Laboratory Toshiba Corp.

• Saida Shigehiko

  Microelectronics Engineering Laboratory Toshiba Corp.

関連論文

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• New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism
• Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
• Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
• Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping

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