Work Function Instability at pMOS Metal/HfSiON Interfaces
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Tsuchiya Yoshinori
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corp.
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Tsuchiya Yoshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corp.
関連論文
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
- Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
- Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
- Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
- Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
- The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
- Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
- Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
- Dielectric Constant Behavior of Hf-O-N System
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
- Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
- Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
- Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
- Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
- Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
- Physical Understanding of Determinant Factors for φeff on La-based High-k
- Work Function Instability at pMOS Metal/HfSiON Interfaces
- Dielectric Constant Behavior of Hf–O–N System
- Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
- Re-Examination of Performance and Reliability Degradation in Metal--Oxide--Nitride--Oxide--Semiconductor Memory with Ultrathin SiN Charge Trap Layers
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
- Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
- Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process
- Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes