A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization

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1996-08-26

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An Experimental Study of Impact Ionization Phenomena in Sub-0.1μm Si MOSFETs
A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization

スポンサーリンク