MRAM Applications Using Unlimited Write Endurance(Next-Generation Memory for SoC,<Special Section>VLSI Technology toward Frontiers of New Market)

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概要

• 論文の詳細を見る

• Apart from magnetic random access memories (MRAM), nonvolatile memories cannot be used without causing fatigue. As the use of MRAMs can solve fatigue problems, MRAMs have a large potential to open up large new markets. The manufacturing cost of LSIs cannot be reduced while they have not been produced massively. To increase the size of the MRAM market, new applications, in which MRAMs create added value, are needed. A demo system that models a drive recorder was developed to introduce the novel features of MRAMs, and a 4-Mb MRAM was developed to be used in the demo system.

• 社団法人電子情報通信学会の論文
• 2007-10-01

著者

• 本田 雄士

  日本電気(株)システムデバイス研究所

• 本田 雄士

  Nec基礎研究所

• Honda T

  System Devices Research Laboratories Nec Corporation

• SUGIBAYASHI Tadahiko

  System Devices Research Laboratories, NEC Corporation

• HONDA Takeshi

  System Devices Research Laboratories, NEC Corporation

• SAKIMURA Noboru

  System Devices Research Laboratories, NEC Corporation

• TAHARA Shuichi

  System Devices Research Laboratories, NEC Corporation

• KASAI Naoki

  System Devices Research Laboratories, NEC Corporation

• Tahara S

  System Devices Research Laboratories Nec Corporation

• Tahara Shuichi

  System Devices Research Laboratories Nec Corporation

• Sakimura Noboru

  System Devices Research Laboratories Nec Corporation

• Sakimura Noboru

  Device Platforms Laboratories Nec Corporation

• Honda T

  Fukuoka Univ. Fukuoka Jpn

• Kasai Naoki

  Device Platforms Laboratories Nec Corporation

• Sugibayashi T

  Device Platforms Laboratories Nec Corporation

• Sugibayashi Tadahiko

  Nec Corporation Device Platforms Research Laboratories

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