Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer

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概要

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• We examined the effects of the capping layers of Ta, Al-oxide (AlO), and Ru on the magnetic properties of ultrathin (1–20 nm) NiFe free layers and investigated thermal degeneration of the switching field ($H_{\text{sw}}$) in magnetic tunnel junctions (MTJs) using these caps in the cell structure of magnetoresistive random access memory (MRAM). The magnetization reversal of the free layer was found to be sensitive to the capping layer that affected various magnetic anisotropies. For postannealing temperatures of up to 350 °C, the $H_{\text{sw}}$ of a NiFe(2 nm)/AlO/Ta free layer was thermally stable, whereas that of conventional NiFe(3 nm)/Ta seriously deteriorated. This is because the AlO capping layer completely prevented the thermal interdiffusion between the NiFe and Ta layers even after annealing at 400 °C. Moreover, a free layer with a small magnetostriction reduced the influence of the stress-relaxation on the free layer caused by postannealing, which also resulted in a thermally stable $H_{\text{sw}}$ in MTJs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-15

著者

• Hada Hiromitsu

  System Devices And Fundamental Research Nec Corporation

• Tahara Shuichi

  System Devices Research Laboratories Nec Corporation

• Ohshima Norikazu

  System Devices Research Laboratories Nec Corporation

• Suemitsu Katsumi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Amano Minoru

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Fukumoto Yoshiyuki

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Numata Hideaki

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Nagahara Kiyokazu

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Asao Yoshiaki

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Yoda Hiroaki

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Yoda Hiroaki

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Asao Yoshiaki

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Hada Hiromitsu

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Tahara Shuichi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

関連論文

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• Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs
• High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma
• Magnetically Damage-free Etching of MTJ Film for Future 0.24-μm-rule MRAMs
• Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer
• Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory

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