Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode(Integrated Electronics)

概要

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We propose a writing circuit scheme to screen intermittent failure cells for toggle MRAM. The scheme, comprising a current waveform circuitry that controls rise/fall time of writing current, drastically decreases the probability of intermittent failure. To apply the scheme to largecapacity MRAMs, a current booster containing discharging capacitors has also been developed. It adjusts the waveform of writing current to that designed by the current waveform circuitry even in presence of parasitic capacitors and resistors along the writing current path. Such a technique is essential for achieving stability in large-capacity MRAMs.
社団法人電子情報通信学会の論文
2007-02-01