Sugibayashi Tadahiko | Nec Corporation Device Platforms Research Laboratories

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概要

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著作論文

MRAM Applications Using Unlimited Write Endurance(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)
Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode(Integrated Electronics)
MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current
Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD
Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
A Distributive Serial Multi-Bit Parallel Test Scheme for Large Capacity DRAMs (Special Section on High Speed and High Density Multi Functional LSI Memories)
A Crossing Charge Recycle Refresh Scheme with a Separated Driver Sense-Amplifier for Gb DRAMs (Special Issue on ULSI Memory Technology)
Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

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