A Distributive Serial Multi-Bit Parallel Test Scheme for Large Capacity DRAMs (Special Section on High Speed and High Density Multi Functional LSI Memories)
スポンサーリンク
概要
- 論文の詳細を見る
A distributive serial multi-bit parallel test scheme for large capacity DRAMs has been developed. The scheme, distributively and serially, extracts and compares the data from cells on a main word-line. This test scheme features a high parallel test bit number, little restriction on test patterns, and, with regard to cells and sense-amplifiers, the same operational margin as normal mode. In an experimental 256-Mb DRAM, the scheme successfully has achieved a 512-bit parallel test.
- 社団法人電子情報通信学会の論文
- 1994-08-25
著者
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Takeshima Toshio
The Ulsi Device Development Laboratories Nec Corporation
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Fujita Mamoru
The Ulsi Device Development Laboratories Nec Corporation
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Aimoto Y
Nec Corp. Sagamihara‐shi Jpn
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Utsugi S
Ulsi Device Development Laboratories Nec Corporation
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Inoue Ken
The Ulsi Device Development Laboratories Nec Corporation
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Sugibayashi T
Device Platforms Laboratories Nec Corporation
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Takada Hiroshi
The Ulsi Device Development Laboratories Nec Corporation
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Sugibayashi Tadahiko
the ULSI Device Development Laboratories, NEC Corporation
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Naritake Isao
the ULSI Device Development Laboratories, NEC Corporation
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Yamamoto Ichiro
the ULSI Device Development Laboratories, NEC Corporation
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Matano Tatsuya
the ULSI Device Development Laboratories, NEC Corporation
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Aimoto Yoshiharu
the ULSI Device Development Laboratories, NEC Corporation
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Utsugi Satoshi
the ULSI Device Development Laboratories, NEC Corporation
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NARITAKE Isao
ULSI Device Development Laboratories, NEC Corporation
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Naritake Isao
Ulsi Device Development Laboratories Nec Corporation
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Sugibayashi Tadahiko
Nec Corporation Device Platforms Research Laboratories
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Yamamoto Ichiro
The Ulsi Device Development Laboratories Nec Corporation
関連論文
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- Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD
- Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
- A Distributive Serial Multi-Bit Parallel Test Scheme for Large Capacity DRAMs (Special Section on High Speed and High Density Multi Functional LSI Memories)
- A Crossing Charge Recycle Refresh Scheme with a Separated Driver Sense-Amplifier for Gb DRAMs (Special Issue on ULSI Memory Technology)
- Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition