A 350-MS/s 3.3-V 8-bit CMOS D/A Converter Using a Delayed Driving Scheme (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
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概要
- 論文の詳細を見る
High-end graphic systems with 3 million pixels require 8-bit D/A converters with more than 300-MS/s conversion rate. Furthermore, D/A converters need to operate with low supply voltage when they are integrated with large-scale digital circuits on a half-micron CMOS process. This paper describes a 350-MS/s 8-bit CMOS D/A converter with 3.3-V power supply. A current source circuit with a delayed driving scheme is developed. This driving scheme reduces a fluctuation of internal node voltage of the current source circuit and high-speed switching is realized. In addition to this driving scheme, two stages of latches are inserted into matrix decoder for reducing glitch energy and for enhancing decoding speed. The D/A converter is fabricated in a 0.5-μm CMOS process with single poly-silicon layer and double aluminum layers. Its settling time is less than 2.4 ns and it successfully operates at 350 MS/s.
- 社団法人電子情報通信学会の論文
- 1997-02-25
著者
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Miki Takahiro
Mitsubishi Electric
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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Kohno Hiroyuki
Mitsubishi Electric Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Okada Keisuke
Information And Technology R&d Center Mitsubishi Electric Corporation:(present Address)renesas T
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Miki Takahiro
System Lsi Division Mitsubishi Electric Corporation
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Miki T
Faculty Of Education Gunma University
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OKADA Keisuke
Mitsubishi Electric Corporation, Information Technology R&D Center
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SUMI Tadashi
Mitsubishi Electric Corporation
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NAKAMURA Yasuyuki
Mitsubishi Electric Corporation
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AMISHIRO Hiroyuki
Mitsubishi Electric Corporation
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