Shohata Nobuaki | Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
スポンサーリンク
概要
関連著者
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Shohata Nobuaki
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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SHOHATA Nobuaki
Fundamental Research Laboratories, NEC Corporation
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MATSUBARA Shogo
Fundamental Res. Labs. and VLSI Development Div., NEC Corporation
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Matsubara Shogo
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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KUBO Yoshimi
Fundamental Research Laboratories, NEC Corporation
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Kubo Yoshimi
Fundamental Research Laboratories Nec Corporation
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Mikami Masao
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Kubo Yoshimi
Fundamental Res. Labs. Nec Corp.
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Miura S
Tohoku Univ. Sendai Jpn
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HOSHIYA Taiji
Oarai Research Establishment, Japan Atomic Energy Research Institute
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Hoshiya Taiji
Oarai Research Establishment Japan Atomic Energy Research Institute
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ARUGA Tetsuya
Department of Chemistry, Graduate School of Science, Kyoto University
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Takamura Saburo
Tokai Research Establishment, Japan Atomic Energy Research Institute
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Kobiyama Mamoru
Faculty of Engineering, Ibaraki University
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Miura Sadahiko
Fundamental Research Laboratories Nec Corporation
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ARUGA Takeo
Tokai Research Establishment, Japan Atomic Energy Research Institute
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Aruga T
Kyoto Univ. Kyoto Jpn
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Shohata N
Fundamental Research Laboratories Nec Corporation
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Shohata Nobuaki
Fundamental Research Laboratories Nec Corporation
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Takamura S
Tokai Research Establishment Japan Atomic Energy Research Institute
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CROTEAU Andre
Fundamental Research Laboratories, NEC Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Kobiyama M
Faculty Of Engineering Ibaraki University
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Kobiyama Mamoru
Faculty Of Engineering Ibaraki University
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Croteau Andre
Fundamental Research Laboratories Nec Corporation
著作論文
- Critical Current and Activation Energy in Bi_2Sr_2Ca_1Cu_2O_x Films after Ion Irradiation
- Epitaxial Growth of PbTiO_3 on MgAl_2O_4/Si Subtrates : T: Thin Film
- Ferroelectric Pb(Zr, Ti)O_3 Thin Films Prepared by Metal Target Sputtering : T: Thin Film