Electrical Properties of Hg_<1-x>Cd_xTe Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy
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概要
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Electrical properties of Hg_1-x>Cd_xTe layers grown by low-temperature metalorganic vapor phase epitaxy at 275℃ have been studied. Substrates used were (1OO) GaAs. The precursors used were dimethylcadmium (DMCd),elemental mercury, and ditertiarybutyltelluride. Cadmium composition x of the layers was controlled from O to 1 by DMCd flow. Van der Pauw measurements were carried out in the temperature range from 25 to 300 K. For HgTe layers, typical 80 K electron concentration and Hall mobility of 4.4 × 10^16 cm^-3 and 8.0 × 10^4 cm^2/V・s were obtained. For CdTe, 300 K hole concentration and hole Hall mobility of 1.2 × 10^15 cm^-3 and 6.5 × 10^1 cm^2/V・s were obtained. In the intermediate Cd composition region of × =O.44, 80 K electron concentration of 8.0 × 10^15 cm^-3 and Hall mobility as high as 7.4 × 1O^3 cm^2/V・s were also obtained. The experimental mobilities were explained by polar-optical phonon and alloy scattering.
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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Ferid Touati
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yasuda Kazuhito
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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HATANO Hiroki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MAEJIMA Takayuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MINAMIDE Masaya
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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KAWAMOTO Kazuhiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Hatano Hiroki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Minamide Masaya
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Kawamoto Kazuhiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Maejima Takayuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
関連論文
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