Selective Silicon Epitaxy Using Reduced Pressure Technique

スポンサーリンク

概要

• 論文の詳細を見る

• Silicon selective epitaxial growth using the SiH_2Cl_2-HCI-H_2 system was successfully accomplished on a window surrounded by fine patterned insulator films as a mask. Surface planarity was obtained at less than 80 Torr reduced pressure. Good selectivity was realized by suitable HCl injection during epitaxial growth. Moreover, it was found that the induced defect density on the epi-layer was less at lower growth temperature.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• Tsuya Hideki

  Fundamental Research Laboratories Nec Corporation

• Tsuya Hideki

  Fundamental Research Laboratories

• Kurogi Yukinori

  Microelectronics Research Laboratories Nippon Electric Co. Ltd.

• Kurogi Yukinori

  Microelectronics Research Laboratories Nec Corporation

• TANNO Kohetsu

  Fundamental Research Laboratories

• ENDO Nobuhiro

  Microelectronics Research Laboratories, Nippon Electric Co., Ltd.

• KITAJIMA Hiroshi

  Fundamental Research Laboratories

• Kitajima H

  Forestry And Forest Products Research Institute

• Endo Nobuhiro

  Microelectronics Research Laboratories

• Endo Nobuhiro

  Microelectronics Research Laboratories Nippon Electric Co. Ltd.

• Tanno Kohetsu

  Fundamental Research Laboratories:(present Address) 1st Lsi Division Nec Dorporation Ltd.

関連論文

• Selective Silicon Epitaxy Using Reduced Pressure Technique
• Superconducting Properties of Fe-Sn Superimposed Films
• Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers
• Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
• Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
• Local Loading Effect in Selective Silicon Epitaxy
• Secondary Ion Analysis of Silicon under Ar^+ Ion Etching in Chlorine and Fluorine Flux
• Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
• Facet Formation in Selective Silicon Epitaxial Growth
• Device Layer Transfer Technique using Chemi-Mechanical Polishing
• Crystalline Defects in Selectively Epitaxial Silicon Layers
• Biology of the Japanese Green-lined Albizzia Longicorn, Xystrocera globosa (Coleoptera : Cerambycidae)
• Etching Characteristics for Organosilica
• Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces

もっと見る 閉じる

スポンサーリンク