Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

スポンサーリンク

概要

• 論文の詳細を見る

• Defect density dependence on various surface cleaning conditions for molecular beam epitaxial (MBE) silicon films was investigated. Defect-free films were obtained on (100) and (511) wafers, using a combination of ozone cleaning and predeposition process after the usual wet cleaning. On the (111) wafer, the defect density dependence on growth rate was examined. The two-step growth-rate procedure was effective in decreasing stacking faults on the (111) wafer. The difference in defect density between (100) and (111) wafers is also discussed.

• 社団法人応用物理学会の論文
• 1985-04-20

著者

• Tsuya Hideki

  Fundamental Research Laboratories Nec Corporation

• Tsuya Hideki

  Fundamental Research Laboratories

• Tatsumi Toru

  Fundamental Research Laboratories Nec Corporation

• Aizaki Naoaki

  Fundamental Research Laboratories Nec Corporation

関連論文

• Crystallization of Amorphous Silicon with Clean Surfaces
• Selective Silicon Epitaxy Using Reduced Pressure Technique
• Superconducting Properties of Fe-Sn Superimposed Films
• Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers
• Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
• Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
• Local Loading Effect in Selective Silicon Epitaxy
• YBa_2Cu_3O_y Superconducting Thin Film Obtained by Laser Annealing : Electrical Properties of Condensed Matter
• Surface Segregation at Boron Planar Doping in Silicon Molecular Beam Epitaxy : Condensed Matter
• Si/SiO_x/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition

スポンサーリンク