Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers

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概要

• 論文の詳細を見る

• Thermally induced microdefects in heavily doped silicon wafers are investigated. It has been shown that the generation of thermally induced microdefects is strongly affected by the type and concentration of dopants, and that microdefects necessary for intrinsic gettering are not easily generated in heavily doped n-type wafers. To generate the microdefects in heavily doped n-type wafers, an improved heat treatment procedure is developed. The observed results are discussed in terms of the difference of point defect density between p- and n-type wafers.

• 社団法人応用物理学会の論文
• 1983-01-20

著者

• Tsuya Hideki

  Fundamental Research Laboratories Nec Corporation

• Tsuya Hideki

  Fundamental Research Laboratories Nippon Electric Co. Ltd.

• Tsuya Hideki

  Fundamental Research Laboratories

• KONDO Yojiro

  Fundamental Research Laboratories, Nippon Electric Co., Ltd.

• KANAMORI Masaru

  Fundamental Research Laboratories, Nippon Electric Co., Ltd.

• Kanamori Masaru

  Fundamental Research Laboratories Nec Corporation

• Kondo Yojiro

  Fundamental Research Laboratories Nippon Electric Co. Ltd.:(present Address) Resources And Environme

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