Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam

スポンサーリンク

概要

• 論文の詳細を見る

• We have developed a new cantilever system for scanning probe microscopy. The microcantilever system designed for electrical resistivity measurements of nanomaterials has 16 electrodes and dual cantilevers. One cantilever with four additional electrodes is for the resistivity measurement in the four-point-probe mode. The other lever is for surface observation. The contact forces of both the levers are controlled by a piezoresistor in the self-sensitive detection mode. The nano-four-point probes on the electrical measurement lever are fabricated by using a focused ion beam. The width of the probe electrode is approximately 200 nm. The distance between the probes is approximately 300 nm. The feasibility of electrical measurements is confirmed by measuring the contact characteristics using a graphite sample.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Nagase Masao

  Ntt Basic Research Laboratories

• NAMATSU Hideo

  NTT Basic Research Laboratories

• TAKAHASHI Hiroshi

  Seiko Instruments Inc.

• SHIRAKAWABE Yoshiharu

  Seiko Instruments Inc.

• Shirakawabe Yoshiharu

  Seiko Instruments Inc., 1-8 Nakase, Mihamaku, Chiba 261-8507, Japan

• Nagase Masao

  NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan

• Namatsu Hideo

  NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan

関連論文

• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
• A Field-Effect Transistor with a Deposited Graphite Thin Film
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Line-Edge Roughness: Characterization and Material Origin
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
• Threshold Voltage of Si Single-Electron Transistor
• Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
• A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
• Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
• Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
• Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
• Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
• Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
• Edge-Enhancement Writing for Electron Beam Nanolithography
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
• Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
• Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
• Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
• Contact Conductance Measurement of Locally Suspended Graphene on SiC
• Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
• A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
• Binary-Solvent Developer for Cross-Linked Positive-Tone Resists
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
• Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
• Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
• Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
• Field-Effect Transistor with Deposited Graphite Thin Film
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Threshold Voltage of Si Single-Electron Transistor
• Line-Edge Roughness: Characterization and Material Origin
• Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
• The Impact of Supercritical Fluoro-Compounds on Lithography Use
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
• Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
• Supercritical Improvement of Resist Patterns by Introducing Functional Molecules
• Electron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Electrons
• Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology

もっと見る 閉じる

スポンサーリンク