Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Nagase Masao
Ntt Basic Research Laboratories
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Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
関連論文
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Silicon devices and materials)
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Electron devices)
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction
- Strongly Enhanced Sensitivity of Piezoresistive Cantilevers by Utilizing the Superconducting Proximity Effect
- Line-Edge Roughness: Characterization and Material Origin
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Optical Tuning of Coupled Micromechanical Resonators
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Threshold Voltage of Si Single-Electron Transistor
- Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
- Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
- 27aVE-11 Investigating the activation barrier between the stable phases of oscillation in an electromechanical resonator
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
- Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
- Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Electromechanical displacement detection with an on-chip high electron mobility transistor amplifier (Special issue: Microprocesses and nanotechnology)
- Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
- 22pTG-12 Self-cooling of a Micro-mechanical Resonator by Lorentz Force
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Feedback Cooling of a Strained GaAs Micromechanical Beam Resonator
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
- Field-Effect Transistor with Deposited Graphite Thin Film
- Threshold Voltage of Si Single-Electron Transistor
- Line-Edge Roughness: Characterization and Material Origin
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology