Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-01
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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YAMADA Takumi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Yamada T
Department Of Electrical And Electronics Engineering Sophia University
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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