Application of InAs Freestanding Membranes to Electromechanical Systems
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Miyashita S
Ntt Advanced Technology Corp.
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MIYASHITA Sen
NTT Advanced Technology Corp.
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DREYFUS Remi
NTT Basic Research Laboratories, NTT Corporation
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Dreyfus Remi
Ntt Basic Research Laboratories Ntt Corporation:ecole Superieure De Physique Et De Chimie Industriel
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
関連論文
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Silicon devices and materials)
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Electron devices)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Crystal Growth of Hen Egg White Lysozyme under High Pressure
- Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
- Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction
- Strongly Enhanced Sensitivity of Piezoresistive Cantilevers by Utilizing the Superconducting Proximity Effect
- Optical Tuning of Coupled Micromechanical Resonators
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
- 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- 27aVE-11 Investigating the activation barrier between the stable phases of oscillation in an electromechanical resonator
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- Back-Gated Point Contact
- Back-Gated Point Contact
- Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
- Interferometric Observation of the Interfacial Concentration Gradient Layers Around a Lysozyme Crystal
- Comparison of Atomic Force Microscopy and Nanoscale Optical Microscopy for Measuring Step Heights
- 28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
- Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
- Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Electromechanical displacement detection with an on-chip high electron mobility transistor amplifier (Special issue: Microprocesses and nanotechnology)
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
- 22pTG-12 Self-cooling of a Micro-mechanical Resonator by Lorentz Force
- Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device
- Transmission Type RF Single Electron Transistor Operation of a Semiconductor Quantum Dot
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Feedback Cooling of a Strained GaAs Micromechanical Beam Resonator
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Gate-Controlled Lateral Diodes Formed in Undoped Heterostructure
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Transport Properties of Parallel Multiple Ballistic Point Contacts
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Imaging of Local Charge Density in an InAs/GaAs Two-Dimensional Heterostructure by Scanning Tunneling Microscopy
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Field-Effect Transistor with Deposited Graphite Thin Film
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- Modulation of Young's Modulus of Poly(methyl methacrylate) Nanobeam Due to Electron-Beam Exposure
- Superconductivity in Tungsten-Carbide Nanowires Deposited from the Mixtures of W(CO)
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio