Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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SUZUKI Yoshifumi
NTT Electrical Communications Laboratories
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OKAMOTO Hiroshi
NTT Electrical Communications Laboratories
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Suzuki Yoshifumi
Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology
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Suzuki Yoshishige
Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R
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Suzuki Yasuzou
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Ntt Electrical Communications Laboratories
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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