Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE
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概要
- 論文の詳細を見る
CW operation was achieved by a mesa-stripe (10μm wide and 200μm long) GaSb(12nm)/Al_<0.35>Ga_<0.65>Sb(3nm) modified multi-quantum-well (MQW, 6 wells) laser diode grown by molecular beam epitaxy (MBE) with threshold current I_<th>=145 mA at 14℃. Lasing wavelength was 1.662 μm at 9℃. Keys to this achievement were optimizations in (i) MBE growth condition, (ii) layer structure of the MQW wafer (introduction of a superlattice buffer layer and high barrier layers in MQW), and (iii) device fabrication processes. This is the first realization of room temperature cw operation among any type of laser diodes made from an Al-Ga-Sb material system.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Suzuki Yoshifumi
NTT Musashino Electrical Communication Laboratories
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Okamoto Hiroshi
NTT Musashino Electrical Communication Laboratories
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Suzuki Yoshifumi
Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology
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Suzuki Yoshishige
Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Ohmori Yutaka
NTT Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation
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