High Contrast TEM Observation of Lattice Image of GaAs-Al_<0.28>Ga_<0.72>As Superlattice with [100] Electron Beam Incidence

スポンサーリンク

概要

• 論文の詳細を見る

• By using a high resolution transmission electron microscope (TEM) with electron beam incident along a [100] crystal axis, a cross-sectional lattice image exhibiting contrast high enough to distinguish constituent layers in superlattice was first observed on an MBE grown GaAs-Al_xGa_<1-x>As superlattice whose Al composition x was as small as 0.28, a range of great importance in practical device application. A theoretical considertion is given which supports that an observation along a [100] axis is more advantageous not only in obtaining high contrast but also in overcoming some of the illusive interference effects, than a conventional observation along a [110] crystal axis.

• 社団法人応用物理学会の論文
• 1985-09-20

著者

• Suzuki Yoshifumi

  NTT Musashino Electrical Communication Laboratories

• Okamoto Hiroshi

  NTT Musashino Electrical Communication Laboratories

関連論文

• Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
• Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE
• High Contrast TEM Observation of Lattice Image of GaAs-Al_Ga_As Superlattice with [100] Electron Beam Incidence

スポンサーリンク