Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 2003-11-15
著者
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Muhida Riza
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Okajima M
Toshiba Corp. Kawasaki
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OKAMOTO Hiroaki
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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HARANO Tomokazu
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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TOYAMA Toshihiko
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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SUGANO Tsuyoshi
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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OKAJIMA Masaya
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Takakura Hideyuki
Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University
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