Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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KADOTA Yoshiaki
NTT Photonics Laboratories
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Yamamoto N
Sharp Corp. Nara Jpn
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OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
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KAWANO Kenji
NTT Opto-electronics Laboratories
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KADOTA Yoshiaki
NTT Opto-electronics Laboratories
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KISHI Kenji
NTT Opto-electronics Laboratories
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YAMAMOTO Norio
NTT Opto-electronics Laboratories
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Okamoto H
Ntt Optoelectronics Kanagawa Jpn
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Kadota Y
Ricoh Co. Ltd. Yokohama Jpn
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Kadota Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Kishi Kenji
Ntt Opto-elecronics Laborarories
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MAWATARI Hiroyasu
NTT Opto-electronics Laboratories
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MATSUMOTO Shin-ichi
NTT Opto-electronics Laboratories
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Okamoto Hiroshi
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Kishi Kenji
NTT Photonics Laboratories, NTT Corporation
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