Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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OE Kunishige
NTT Opto-electronics Laboratories
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Oe Kunishige
Ntt Opto Electronics Laboratories:(present Address)kyoto Institute Of Technology
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OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
関連論文
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- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Proposal on a Temperature-Insensitive Wavelength Semiconductor Laser
- Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi
- New Semiconductor Alloy GaAs_Bi_x Grown by Metal Organic Vapor Phase Epitaxy
- Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
- Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers