New Semiconductor Alloy GaAs_<1-x>Bi_x Grown by Metal Organic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
A new semiconductor alloy material, GaAs_<1-x>Bi_x has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365℃, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.
- 社団法人応用物理学会の論文
- 1998-11-01
著者
-
Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
-
OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
-
Okamoto Hiroshi
Ntt Optoelectronics Laboratories
関連論文
- 1.3μm Solid-State Plastic Laser in Dye-Doped Fluorinated-Polyimide Waveguide
- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- Low Temperature Dependence of Oscillation Wavelength in GaAs_Bi_x Laser by Photo-Pumping
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
- Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
- High-Gain Optical Amplification of Europium-Aluminum (Eu^-Al)-Nanocluster-Doped Planar Polymer Waveguides
- Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi
- New Semiconductor Alloy GaAs_Bi_x Grown by Metal Organic Vapor Phase Epitaxy
- Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
- High-Gain Optical Amplification of Europium–Aluminum (Eu3+–Al)-Nanocluster-Doped Planar Polymer Waveguides
- Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
- Characteristics of Semiconductor Alloy GaAs_Bi_x
- Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- High Hole Mobility in GaAsxBi[x] Alloys
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- Near Infrared Light Amplification in Dye-Doped Polymer Waveguide
- New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
- Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
- Fiber-to-Fiber Optical Gain of Polymer-Based Amplifier with Self-Written Active Waveguide
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
- Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
- Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy
- Anisotropic Optical Transitions in [110]-Oriented Semiconductor Quantum Well Studied by Photoreflectance Spectroscopy
- Optical Amplification in Organic Dye-doped Polymeric Channel Waveguide under CW Optical Pumping