Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi
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概要
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The structural properties and energy-gap dependence on InBi content and temperature are investigated for metalorganic-vapor-phase-epitaxy (MOVPE)-grown InAsBi. All measurement results-X-ray-diffraction, secondary ion mass spectroscopy (SIMS), and Rutherford-backscattering-spectroscopy (RBS) channeling-show that the layer has good crystalline quality. The energy-gap dependence on InBi content is evaluated by optical-transmission and low-temperature photo luminescence, and it is shown that the dependence can be expressed by a linear equation. The temperature dependence of E_g (ΔE_g/ΔT) is evaluated by optical-transmission measurement. The ΔE_g/ΔT of 0.22 meV/K obtained for InAs_<0.963>Bi_<0.037> is smaller than that of InSb (0.29 meV/K), whose energy gap is smaller than that of InAs_<0.963>Bi_<0.037>.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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OE Kunishige
NTT Opto-electronics Laboratories
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Oe Kunishige
Ntt Opto Electronics Laboratories:(present Address)kyoto Institute Of Technology
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OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
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