YAMAMOTO Norio | NTT Opto-electronics Laboratories
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概要
関連著者
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YAMAMOTO Norio
NTT Opto-electronics Laboratories
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Yamamoto N
Sharp Corp. Nara Jpn
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MAWATARI Hiroyasu
NTT Opto-electronics Laboratories
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KISHI Kenji
NTT Opto-electronics Laboratories
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Kishi Kenji
Ntt Opto-elecronics Laborarories
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KADOTA Yoshiaki
NTT Photonics Laboratories
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Yokoyama Kiyoyuki
NTT Opto-electronics Laboratories
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Kishi Kiyoshi
Department Of Applied Physics The Science University Of Tokyo
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Kondo Y
Ntt Photonics Laboratories
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Kondo Y
Ntt Opto‐electronics Lab. Kanagawa Pref.
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Kondo Y
Toyohashi Univ. Technol. Toyohashi‐shi Jpn
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Tohmori Y
Ntt Photonics Laboratories
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Tohmori Yuichi
Ntt Opto-electronics Laboratories
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Yamamoto M
Ntt Opto-electronics Laboratories
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KONDO Yasuhiro
NTT Opto-electronics Laboratories
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OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
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KAWANO Kenji
NTT Opto-electronics Laboratories
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YAMAMOTO Mitsuo
NTT Opto-electronics Laboratories
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KADOTA Yoshiaki
NTT Opto-electronics Laboratories
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Okamoto H
Ntt Optoelectronics Kanagawa Jpn
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Kadota Y
Ricoh Co. Ltd. Yokohama Jpn
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Kadota Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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KANO Fumiyoshi
NTT Network Innovation Laboratories
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YOSHIKUNI Yuzo
NTT Opto-electronics Laboratories
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Kano F
Ntt Opto-electronics Laboratories
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Kano Fumiyoshi
Ntt Opto-electronics Laboratories
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MATSUMOTO Shin-ichi
NTT Opto-electronics Laboratories
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Yoshikuni Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Kano F
Ntt Network Innovation Laboratories
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Okamoto Hiroshi
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Kishi Kenji
NTT Photonics Laboratories, NTT Corporation
著作論文
- C-V Analysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode
- Spectral Linewidth and Linewidth Enhancement Factor in 1.5-μm Modulation-Doped Strained Multiple-Quantum-Well Lasers
- Electrical Evaluation of Dry Etching Damage on the Side Wall of Mesa Structure
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)