Improvement in Threshold Voltage of 1.55-μm Buried-Heterostructure Vertical-Cavity Surface-Emitting Laser
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概要
- 論文の詳細を見る
We report on 1.55-μm vertical-cavity surface-emitting lasers (VCSELs) with a buried heterostructure (BH) fabricated on an undoped GaAs/AlAs distributed Bragg reflector (DBR). These BH VCSELs exhibit a low threshold voltage of 1.3 V due to both our improved $p$-InP/InGaAsP DBR design and the introduction of an intracavity structure for an $n$-contact. Our BH VCSEL also shows a single transverse mode with a side-mode suppression ratio of more than 40 dB even at high injection currents under cw operation, and the potential to achieve a maximum modulation bandwidth of 4.7 GHz.
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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TOHMORI Yuichi
NTT Photonics Laboratories
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Tohmori Y
Ntt Photonics Laboratories
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KAWANO Kenji
NTT Opto-electronics Laboratories
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto Hiroshi
Ntt Photonics Laboratories Ntt Corporation
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Asaka Kota
Ntt Photonics Laboratories Ntt Corporation
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Iga Ryuzo
Ntt Photonics Laboratories Ntt Corporation
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Ohiso Yoshitaka
Ntt Photonics Laboratories Ntt Corporation
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Asaka Kota
Ntt Corp. Kanagawa Jpn
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Kishi Kenji
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198,
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Okamoto H
Biological Resources Research And Development Centre Fukui Prefectural University
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Kishi Kenji
NTT Photonics Laboratories, NTT Corporation
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