Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180°C by Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Microstructures of low-temperature-grown polycrystalline Si (poly-Si) have been studied by transmission electron microscope measurements. Two poly-Si layers with different thicknesses in the n-i-p structure were prepared by plasma chemical vapor deposition at 180°C. The ${\sim}50$-nm-thick amorphous-rich layer is observed at the bottom of the 0.5-μm-thick poly-Si layer. Meanwhile, in the first hundreds of nanometers in the 2.4-μm-thick poly-Si layer, an increase in the crystalline fraction due to crystalline columns grown onto the substrate n-layer is found. Solid phase crystallization during the deposition in the initial growth region down to the substrate is discussed.
- Japan Society of Applied Physicsの論文
- 2003-11-15
著者
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Muhida Riza
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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HARANO Tomokazu
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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OKAJIMA Masaya
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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Sugano Tsuyoshi
Department Of Mineral Science And Technology Faculty Of Engineering Kyoto University
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Toyama Toshihiko
Department Of Physical Science Graduate School Of Engineering Science
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Okamoto Hiroaki
Department of Advanced Materials and Science, Faculty of Engineering, Yamaguchi University
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Sugano Tsuyoshi
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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