Excitation Mechanism of Luminescence Centers in Nanostructured ZnS:Tb,F Thin-Film Electroluminescent Devices
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概要
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The excitation mechanism of luminescence centers has been studied in a low-operation-voltage nanostructured (NS-) ZnS:Tb,F thin-film electroluminescent (TFEL) device, of which emission layer is a multilayer composed of 4.5-nm-thick ZnS:Tb,F nanocrystal layers and 0.7-nm-thick insulating interlayers. The EL intensity ratio of the 5D3 excited level to the 5D4 excited level of Tb3+ increased with operation voltage, which revealed that the dominant mechanism is the direct-impact excitation of luminescence centers by hot electrons. Moreover, the intensity ratio observed from the ZnS:Tb,F NS-TFEL device was greater than that observed from the conventional TFEL device, which implies that the energy distribution of hot electrons in the emission layer of the NS-TFEL device shifts to a higher energy compared with that in emission layer of the TFEL device. These assumptions are discussed in conjunction with similar results obtained using Tm3+ as an alternative luminescence center in the NS-TFEL device.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Adachi Daisuke
Department Of Chemical Science And Engineering Graduate School Of Engineering Kobe University
-
Toyama Toshihiko
Department Of Physical Science Graduate School Of Engineering Science
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Okamoto Hiroaki
Department of Advanced Materials and Science, Faculty of Engineering, Yamaguchi University
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Takei Kohei
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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